Product description:
The WSD20L70DN is a high performance 20V 70A P-channel MOSFET with very high cell density that provides excellent RDSON and gate charge for most synchronous buck converter applications.
Product parameter:
Type Designator: WSD20L70DN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 83 W
Maximum Drain-Source Voltage |Vds|: 20 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 0.9 V
Maximum Drain Current |Id|: 70 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 70 nC
Rise Time (tr): 52 nS
Drain-Source Capacitance (Cd): 927 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0079 Ohm
Package: DFN3X3-8
Feature:
• Advanced high cell density trench technology
• ultra-low gate charge
• Excellent CdV/dt attenuation
• 100% EAS guarantee
• Green equipment is available
Application:
• High frequency point-of-load synchronization
• Step-Down converter for MB/NB/UMPC/VGA
• Networked DC-DC power system
• load switch
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WSD20L70DN
